| PART |
Description |
Maker |
| MX27C512 MX27C512PC-12 MX27C512PC-15 MX27C512PC-45 |
Single Output LDO, 50mA, Fixed(3.2V), Low Quiescent Current, Thermal Protection 5-SOT-23 12k位[64Kx8]的CMOS存储
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDSO28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PQCC32
512K-BIT [64Kx8] CMOS EPROM 64K X 8 OTPROM, 90 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 45 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 7-PDIP 64K X 8 OTPROM, 120 ns, PDIP28
Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP 64K X 8 OTPROM, 55 ns, PDIP28
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| LY626416 LY626416GL LY626416GV LY626416LL LY626416 |
64K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS616LV1010ACP75 BS616LV1010ACG75 BS616LV1010AIP75 |
Very Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconductor
Brilliance Semiconducto...
|
| KM68U512B |
64Kx8 bit Low Power and Low Voltage CMOS Static RAM(64K x8位高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6F1016U4C-EF70 DS_K6F1016U4C K6F1016U4C-AF55 K6F1 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| BS616UV1010AIP10 BS616UV1010DIG10 BS616UV1010ACP10 |
Ultra Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconducto...
|
| BS616LV1010 BS616LV1010AC BS616LV1010AI BS616LV101 |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| N01L63W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit
|
ON Semiconductor
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
| BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
EEPROM (4kx8) 32K 2.5-6.0
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (1024x8) 8K
EEPROM 256K X 8 200ns
EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C
EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
EEPROM 128K X 8 150ns
EEPROM (8kx8) 64K 1.8-6.0
EEPROM (2048x8)(1024x16)16K
EEPROM U 804-29EE0107CWH
EEPROM 64K X 8 70ns
EEPROM (256x8) 2K 2.5-6.0
EEPROM (8kx8) 64K 2.5-6.0
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP
EEPROM (384x8) 128k 16
EEPROM SPI 1KBIT
EEPROM SPI 4096X8 BIT
EEPROM SRL 64X16 BIT
EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
EEPROM 2kb 1.7-5.5V Ind I2C
EEPROM 512K-Bit CMOS PARA EEPROM
EEPROM (32kx8) 256K 3V 250
EEPROM 64K X 8 512K 5V 150
EEPROM 256K (32KX8)
|
Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
BCD Semiconductor Manufacturing, Ltd.
Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
|
